Effect of sulfur and selenium on the surface relief of insulating films and electrical characteristics of metal-insulator-p-GaAs structures

The effect of S and Se atoms on the surface relief of insulating layers dep osited on the GaAs substrate was investigated. It was demonstrated that the incorporation of chalcogens in the surface region of a semiconductor leads to smoothing of the surface relief of insulating films. Simultaneous decre ase in the density of surface states at the insulator-p-GaAs interface was observed. The resulting effect of the S and Se atoms depends on the insulat ing material. (C) 2001 MAIK "Nauka/Interperiodica".