Solar cells utilizing thin-film polycrystalline silicon can achieve photovo
ltaic power conversion efficiencies greater than 19%. These high efficienci
es are a result of light trapping and back surface passivation. Optimum sil
icon thickness, for devices employing such technology, has been determined
to be 20 mum (Blakers et al., Appl. Phys. Lett. 60 (1992) 2572) to 35 mum (
Rand et al., Proceedings of the IEEE Photovoltaic Specialist Conference, Or
lando, FL, May 1990, p. 263. Low cost is achieved by minimizing the require
d amount of silicon feedstock per watt of power output. The use of an elect
rically insulating supporting substrate allows for monolithic, series conne
cted sub-modules. A solar cell with a 20 mum thick polycrystalline Si-layer
on a ceramic substrate, utilizing both light trapping and back-surface pas
sivation, was fabricated and characterized. A short-circuit current of 25.8
mA/cm(2) was measured and verified by the National Renewable Energy Labora
tory(NREL). (C) 2001 Published by Elsevier Science B.V. All rights reserved
.