Spatial distribution of high-density microwave plasma for fast deposition of microcrystalline silicon film

The high-density microwave plasma utilizing a spokewise antenna was success fully applied to fast deposition of highly crystallized and photoconductive microcrystalline silicon (muc-Si:H) film at low temperatures. Among variou s deposition parameters, spatial distribution of ion energy (IDF) mainly de termines him crystallinity. The best crystallinity was obtained at the axia l distance, Z from the quartz glass plate, where the spread of mean ion ene rgy is minimum. By optimizing the axial distance, Z and total pressure, hig hly crystallized and photoconductive muc-Si:H film could be fabricated with a high deposition rate of 47 Angstrom /s at similar to 50 mTorr in SiH4 an d Ar plasma. (C) 2001 Elsevier Science B.V. All rights reserved.