Kelvin probe measurements of microcrystalline silicon on a nanometer scaleusing SFM

Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is real ized by combining a modified Kelvin probe experiment and a scanning force m icroscope. The measured surface potential revealed that the built-in electr ic drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assu med within the intrinsic layer in order to obtain coincidence of the measur ements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode. (C) 2001 Elsevier Science B.V. All rights reserved.