The influence of doping on charge carrier transport in a-Si : H

Authors
Herm, D von Aichberger, S Kunst, M
Citation
D. Herm et al., The influence of doping on charge carrier transport in a-Si : H, SOL EN MAT, 66(1-4), 2001, pp. 195-201
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
195 - 201
Database
ISI
SICI code
0927-0248(200102)66:1-4<195:TIODOC>2.0.ZU;2-D
Abstract
The influence of doping on the (opto)electronic properties of a-Si:H films is investigated by transient photoconductivity and photo-induced absorption measurements. The decay rate of the majority charge carrier decreases with doping due to fast minority carrier trapping already active at low doping levels. The transition from electron to hole conduction is observed at 3 pp m B2H6, At high doping levels the recombination rate becomes faster by reco mbination via doping-induced defects. (C) 2001 Elsevier Science B.V. All ri ghts reserved.