The creation of hydrogen radicals by the hot-wire technique and its application for mu c-Si : H

Authors
Harada, H Yoshida, N Yamamoto, K Itoh, T Inagaki, K Inouchi, H Yamana, N Aoki, T Nonomura, S Nitta, S
Citation
H. Harada et al., The creation of hydrogen radicals by the hot-wire technique and its application for mu c-Si : H, SOL EN MAT, 66(1-4), 2001, pp. 253-258
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
253 - 258
Database
ISI
SICI code
0927-0248(200102)66:1-4<253:TCOHRB>2.0.ZU;2-W
Abstract
A new method, Hot-wire assisted PECVD, is proposed for preparing mu -Si:H f ilms. This method is constructed of two parts, plasma-enhanced CVD (PECVD) and hot-wire for exciting hydrogen. Both the crystalline grain size and the volume fraction of Si crystallites in the film are improved by this prepar ation method compared with those of the conventional PECVD. The results obt ained are interpreted by the enhanced hydrogen-radical density. The importa nce of control of H radicals is discussed for the growth of the crystallite . (C) 2001 Elsevier Science B.V. All rights reserved.