Dominant parameter determining dangling-bond density in hydrogenated amorphous silicon films prepared by catalytic chemical vapor deposition

It is found that one of the dominant parameters in determining the dangling -bond (DB) density in hydrogenated amorphous silicon (a-Si:H) films prepare d by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire C VD, is the catalyzer-surface area. a-Si:H films with an initial DB density of 4x10(15)cm(-3) and a saturated one after light soaking of 3x10(16)cm(-3) are prepared by Cat-CVD with a deposition rate of 11 Angstrom /s. "Catalyt ic plate" instead of the conventional wire is also proposed in order to sup press the heat radiation from the catalyzer while keeping the catalyzer sur face area constant. (C) 2001 Elsevier Science B.V. All rights reserved.