High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

Authors
Endo, K Isomura, M Taguchi, M Tarui, H Kiyama, S
Citation
K. Endo et al., High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD, SOL EN MAT, 66(1-4), 2001, pp. 283-288
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
283 - 288
Database
ISI
SICI code
0927-0248(200102)66:1-4<283:HGFOMS>2.0.ZU;2-2
Abstract
A high growth rate (35 Angstrom /s) and a high crystalline volume fraction (73%) were achieved in micro-crystalline silicon (muc-Si) films prepared by Helicon wave plasma CVD. Its high plasma density and low ion energy seem t o promote the high growth rate. It was also found that (111) oriented muc-S i films can be obtained by reducing the self-bias voltage, probably due to less ion damage to the growing surfaces. (C) 2001 Elsevier Science B.V. All rights reserved.