Floating zone growth of beta-Ga2O3: A new window material for optoelectronic device applications

beta -Ga2O3 is a transparent oxide and intrinsically an insulator. Doping a llows the variation of the conductivity for both p- and n-type over a wide range. There are a number of potential applications in optoelectronics such as insulating or conductive window material, or as a substrate. Consequent ly, the influence of doping on the electrical and optical properties is an issue of crucial importance for pushing this material forward to applicatio ns. We report on the successful growth of undoped. Ge- and Ti-doped beta -G a2O3 single crystals by the floating zone technique. Both electrical and op tical properties were characterized. (C) 2001 Elsevier Science B.V. All rig hts reserved.