Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate

The structural and electronic properties of undoped microcrystalline silico n (muc-Si:H) thin films prepared by hot-wire chemical vapor deposition (HWC VD) at various hydrogen dilutions have been studied. UV-visible ellipsometr y was used to quantify the crystalline, amorphous and void fractions, and t o determine the presence, or otherwise, of an amorphous incubation layer. D iffusion-induced time-resolved microwave conductivity measurements showed t hat the electronic transport along the growth direction is notably improved for samples prepared by a double-dilution process, where the H, dilution i s decreased as a function of the deposition time. These results should be u seful for further HWCVD muc-Si:H solar cells. (C) 2001 Published by Elsevie r Science B.V. All rights reserved.