Effect of film thickness on electrical property of microcrystalline silicon

Authors
Andoh, N Hayashi, K Shirasawa, T Sameshima, T Kamisako, K
Citation
N. Andoh et al., Effect of film thickness on electrical property of microcrystalline silicon, SOL EN MAT, 66(1-4), 2001, pp. 437-441
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
437 - 441
Database
ISI
SICI code
0927-0248(200102)66:1-4<437:EOFTOE>2.0.ZU;2-F
Abstract
We report dependences of electrical properties on SiH4/H-2 dilution rate an d film thickness for microcrystalline silicon films formed by a hydrogen ra dical-induced chemical vapor deposition (HRCVD) method. The electrical cond uctivity of the films at SiH4 18 sccm/H-2 120 seem was markedly increased t o 10(-3) S/cm as film thickness increased above 100 nm. Crystalline grains with (220) orientation were formed. Theoretical analysis revealed that grai n boundaries among (220) grains had a low defect density of 1 x 10(12) cm(- 2) so that the high conductivity was achieved. (C) 2001 Elsevier Science B. V. All rights reserved.