Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells

Authors
de Angelis, N Bourgoin, JC Takamoto, T Khan, A Yamaguchi, M
Citation
N. De Angelis et al., Solar cell degradation by electron irradiation. Comparison between Si, GaAs and GaInP cells, SOL EN MAT, 66(1-4), 2001, pp. 495-500
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
495 - 500
Database
ISI
SICI code
0927-0248(200102)66:1-4<495:SCDBEI>2.0.ZU;2-1
Abstract
We monitor the short circuit current and the open circuit voltage of Si, Ga As and GaInP solar cells versus the fluence of 1 MeV electrons. From these data, we extract the fluence dependences of the lifetime and of the concent ration of compensating centers. This allows to compare in detail the radiat ion hardness of cells made with these materials and to modelize their degra dation under a given irradiation. (C) 2001 Elsevier Science B.V. All rights reserved.