High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched toGe substrates

Authors
Takamoto, T Agui, T Ikeda, E Kurita, H
Citation
T. Takamoto et al., High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched toGe substrates, SOL EN MAT, 66(1-4), 2001, pp. 511-516
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
511 - 516
Database
ISI
SICI code
0927-0248(200102)66:1-4<511:HITSCL>2.0.ZU;2-L
Abstract
Conversion efficiency (AM1.5G) of more than 30% was achieved by adding a sm all quantity of Indium into a GaAs bottom cell in the conventional tandem s olar cell on Ge substrate. It was found that the lattice-mismatch between G aAs and Ge caused misfit-dislocations in thick GaAs layers and reduced an o pen-circuit voltage (V-oc) of the cell. An In0.49Ga0.51P/In0.01Ga0.99As tan dem cell lattice-matched to Ge showed a great improvement in efficiency, wh ich was attributed to an increase in the V-oc of the bottom cell and increa ses in the photocurrents both in the top and bottom cells due to reductions in band-gap energy. (C) 2001 Elsevier Science B.V. All rights reserved.