Advanced III-V solar cell structures grown by MOVPE

Citation
Aw. Bett et al., Advanced III-V solar cell structures grown by MOVPE, SOL EN MAT, 66(1-4), 2001, pp. 541-550
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
541 - 550
Database
ISI
SICI code
0927-0248(200102)66:1-4<541:AISCSG>2.0.ZU;2-U
Abstract
The paper reports on the progress of MOVPE-grown III-V epitaxial structures and tandem solar cell development. A multi-wafer reactor with a capacity o f five 4-in wafers is used to grow high-efficiency, large-area tandem solar cells. The benefits of advanced tandem structures for concentrator applica tions based on Ga0.35In0.65P/Ga0.83In0.17As grown lattice mismatched to GaA s are discussed. In order to achieve super-high efficiencies a mechanical s tack of monolithic tandem cells made from Ga0.51In0.49P/GaAs and Al0.25Ga0. 75As0.02Sb0.98/GaSb is suggested. (C) 2001 Elsevier Science B.V. All rights reserved.