Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6

Authors
Goto, S Ueda, T Yamagishi, C
Citation
S. Goto et al., Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6, SOL EN MAT, 66(1-4), 2001, pp. 631-636
Citations number
3
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
66
Issue
1-4
Year of publication
2001
Pages
631 - 636
Database
ISI
SICI code
0927-0248(200102)66:1-4<631:IIPCEO>2.0.ZU;2-H
Abstract
A new type of thermal cleaning for Si surfaces, using Si2H6, has been devel oped for growing GaAs buffer layers with an A-step surface on an Si substra te by metaloraganic vapor-phase epitaxy (MOVPE). This process made it possi ble, for the first time, to grow an A-step surface InGaP solar cell structu re on an Si substrate with good surface morphology. An improvement in photo voltaic conversion efficiency has been achieved by this newly developed pro cess. (C) 2001 Elsevier Science B.V. All rights reserved.