Raman scattering study of photoluminescent spark-processed porous InP

Citation
M. Rojas-lopez et al., Raman scattering study of photoluminescent spark-processed porous InP, THIN SOL FI, 379(1-2), 2000, pp. 1-6
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
379
Issue
1-2
Year of publication
2000
Pages
1 - 6
Database
ISI
SICI code
0040-6090(200012)379:1-2<1:RSSOPS>2.0.ZU;2-8
Abstract
Raman scattering has been used to study porous InP (001) samples prepared b y the application of high voltage spark discharges in air and argon atmosph eres. For photoluminescent material, Raman scattering as well as Normaski m icroscopy of a transversally cut sample, (011) face, show the existence of two very distinct zones, that lie at different depths: a superficial lumine scent region constituted mostly by In2O3 and InPO4 oxides, and a second adj acent deeper zone formed by damaged InP. These results highlight the role t hat the oxidation plays in this material as source of the visible luminesce nce that the material emits when excited with UV radiation. The deepest reg ion shows InP-like vibrational behavior with broad longitudinal optical (LO ) and transversal optical (TO) phonon bands. A fit of the observed lineshap es of the TO and LO modes using the spatial correlation model provides an e stimate of the size of the crystalline regions (L similar to 30 Angstrom). (C) 2000 Elsevier Science B.V. All rights reserved.