Characterization of TiAlN films deposited by reactive pulsed laser ablation

We have deposited TiAlN films by using the reactive laser ablation techniqu e. TiAl targets were ablated in low-pressure N-2 (0.1-10 Pa) atmosphere by 2 X 10(4) XeCl excimer laser pulses at the repetition rate of 10 Hz. The la ser fluence at the target was set at 6 J/cm(2), corresponding to a power de nsity of 0.2 GW/cm(2). The films were deposited on Si substrates at room te mperature, placed at 40 mm from the target. Their characteristics were inve stigated by many different techniques. Scanning electron micrographs show t hat surfaces are plane without cracks or corrugations. From Rutherford back scattering spectra it results that the thickness vary from similar to 100 n m for films deposited at 0.1-0.5 Pa to 50 nm for the film deposited at 10 P a. The man composition is close to TiAlN for the film deposited at 0.1 Pa a nd close to TiAlN2 for the film deposited at 0.5 Pa. X-Ray diffraction anal ysis points to an amorphous structure of the film deposited at the lowest p ressure (0.1 Pa), while peaks of fee TiN and hexagonal Ti3Al2N2 appear in t he spectra of the films deposited at higher N-2 pressures. The complex chem ical bonding of the top surface layer of the films was studied by X-ray pho toelectron spectroscopy. (C) 2000 Elsevier Science B.V. All rights reserved .