PZT thin films with preferred-orientation induced by external stress

Citation
Hx. Qin et al., PZT thin films with preferred-orientation induced by external stress, THIN SOL FI, 379(1-2), 2000, pp. 72-75
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
379
Issue
1-2
Year of publication
2000
Pages
72 - 75
Database
ISI
SICI code
0040-6090(200012)379:1-2<72:PTFWPI>2.0.ZU;2-Y
Abstract
The microstructure of oriented Pb(Zr0.7Ti0.3)O-3 thin films prepared via th e sol-gel method has been carefully investigated. After the precursor was h eated, the resultant thin film displayed (100)-preferred orientation becaus e of accumulation of the colloidal particles. X-Ray diffraction (XRD) resul t indicated that the strong [100]- or [111]-preferred orientation of the PZ T thin films could be observed when the substrates slightly bend under appr opriate external stresses during annealing procedure. Atomic force microsco pe (AFM) images revealed that (100)-oriented grains aggregated in some sepa rate zones. The above results can be well explained in the view of internal stress during crystallization. (C) 2000 Elsevier Science B.V. All rights r eserved.