Low temperature process for nano-structure formation with Si films

Effects of sample preparation conditions on the formation of Si nano-struct ures were investigated. The samples were formed by Various deposition metho ds with various deposition conditions, and subsequent oxidation and/or anne aling was carried out. It was found that the film structure as well as the morphology of the thermally treated samples is greatly affected by not only the substrate temperature and the deposition rate but the presence of O-2 during deposition. In particular, O-2 flow during deposition was observed t o apparently enhance formation as well as growth of Si grains. It was state d that the enhancement of crystallization is a consequence of formation and subsequent evaporation of SiO. These results were accounted for by formati on kinetics of Si nano-structures. Furthermore, it was suggested that an op timized process for Si nano-structure may be obtained through modifications of the kinetics involved by systematic variations of the deposition condit ions. In addition, I-V characteristics observed from the multiple junctions showed tunneling behavior implying the feasibility of fabricating novel de vices such as single electron transistors. (C) 2000 Elsevier Science B.V. A ll rights reserved.