Thermal stability of Mo/SiO2 multilayers

Citation
Fp. Wang et al., Thermal stability of Mo/SiO2 multilayers, THIN SOL FI, 379(1-2), 2000, pp. 308-312
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
379
Issue
1-2
Year of publication
2000
Pages
308 - 312
Database
ISI
SICI code
0040-6090(200012)379:1-2<308:TSOMM>2.0.ZU;2-C
Abstract
The thermal stability of magnetron sputtering deposited Mo/SiO2 multilayere d films was investigated by isothermal annealing, cross-sectional high reso lution electron microscopy and Auger electron spectroscopy. No observable s tructural variation was visualized at the interface between Mo and SiO2 aft er annealing at 400 degreesC for 2 h. At 600 degreesC, a small amount of as -deposited amorphous Mo began to crystallize at the top surface of the samp le. Further increase in the annealing temperature resulted in the formation of large Mo crystalline grains in the film and destruction of the periodic ally distributed Mo/SiO2 multilayer structure. (C) 2000 Elsevier Science B. V. All rights reserved.