The thermal stability of magnetron sputtering deposited Mo/SiO2 multilayere
d films was investigated by isothermal annealing, cross-sectional high reso
lution electron microscopy and Auger electron spectroscopy. No observable s
tructural variation was visualized at the interface between Mo and SiO2 aft
er annealing at 400 degreesC for 2 h. At 600 degreesC, a small amount of as
-deposited amorphous Mo began to crystallize at the top surface of the samp
le. Further increase in the annealing temperature resulted in the formation
of large Mo crystalline grains in the film and destruction of the periodic
ally distributed Mo/SiO2 multilayer structure. (C) 2000 Elsevier Science B.
V. All rights reserved.