Study of the discharge gas trapping during thin-film growth

Discharge gas trapping in thin films produced by sputtering is known to be due to high-energy neutrals bouncing back from the cathode. Qualitatively, the phenomenon is enhanced by raising the discharge voltage and is strongly dependent on the atomic masses of the discharge gas and of the cathode mat erial. In addition to these known effects it is shown that, for a given gas , the trapped amount decreases with increasing melting temperature of the d eposited material. The results obtained both by sample melting and laser ab lation are presented and discussed. (C) 2001 Elsevier Science Ltd. All righ ts reserved.