Optical emission spectroscopy is a commonly used technique for controlling
the reactive sputtering process which however doesn't allow the in situ det
ermination of the critical reactive gas flow rate for high rate deposition
of stoichiometrie ceramic coatings. We present here a method consisting in
exploiting the transmission interferometric phenomena occurring during the
growth of a transparent film on a transparent substrate. This method allows
both the in situ determination of the critical reactive gas flow rate for
high rate deposition of stoichiometric films and the in situ or ex situ det
ermination of the thickness and of the Optical indexes of the deposited fil
m.