A new modeling of the characteristics of GaAs MESFET's

A NEW MODELING OF THE CHARACTERISTICS OF GaAs MESFET'S: A new approach for I-V standard model is proposed. This approach allowed to conceive applicabl e model for MESFET's operating in the turn-one or pinch-off region, and val id for the short-channel and the long-channel MESFET's, in which the two-di mensional potential distribution contributed by the depletion layer under t he gate is obtained by conventional 1D approximation. The drain current is decomposed into two components; the first is due to the conduction current flowing through the conduction channel, and the second component is a resul t of the current flowing through the space charge region resulting from the injection of the channel electrons into this last region. Moreover, compar ison between the proposed analytical model and the experimental data are ma de and good agreement is obtained. In the end, this model is applied to est imate the cut-off frequency of the MESFET-GaAs from these static characteri stics. This estimation is based on the theoretical calculation of the trans conductance and the gate capacitance of the device.