IMPROVEMENT OF THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON BY HYDROGEN PLASMA TREATMENT

The effect of post-deposition treatment by a hydrogen plasma on the st ructural properties, electrical properties and in particular, the stab ility under sunlight illumination, of device-quality intrinsic hydroge nated amorphous silicon films is described. Comparison is made with sa mples annealed in hydrogen gas under similar conditions. Reduction of the light-induced degradation is observed after plasma treatment, by a n amount depending on the treatment temperature, plasma rf power and t reatment time.