BeCdSe as a ternary alloy for blue-green optoelectronic applications

Authors
Ivanov, SV Nekrutkina, OV Sorokin, SV Kaygorodov, VA Shubina, TV Toropov, AA Kop'ev, PS Reuscher, G Wagner, V Geurts, J Waag, A Landwehr, G
Citation
Sv. Ivanov et al., BeCdSe as a ternary alloy for blue-green optoelectronic applications, APPL PHYS L, 78(4), 2001, pp. 404-406
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
404 - 406
Database
ISI
SICI code
0003-6951(20010122)78:4<404:BAATAF>2.0.ZU;2-M
Abstract
Bulk BeCdSe layer lattice-matched to a GaAs substrate, as well as a BeCdSe/ ZnSe quantum well (QW) structure have been grown using the submonolayer dig ital alloying mode of molecular beam epitaxy. The structures have demonstra ted bright photoluminescence up to room temperature and good structural qua lity. Stimulated emission under optical pumping has been obtained for a 2 n m BeCdSe/ZnSe multiple QW structure at 80 K. The bowing parameter of the en ergy gap of this ternary alloy has been estimated as about 4.5 eV. (C) 2001 American Institute of Physics.