X-ray scattering from misfit dislocations in heteroepitaxial films: The case of Nb(110) on Al2O3

Authors
Barabash, RI Donner, W Dosch, H
Citation
Ri. Barabash et al., X-ray scattering from misfit dislocations in heteroepitaxial films: The case of Nb(110) on Al2O3, APPL PHYS L, 78(4), 2001, pp. 443-445
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
443 - 445
Database
ISI
SICI code
0003-6951(20010122)78:4<443:XSFMDI>2.0.ZU;2-D
Abstract
We apply the Krivoglaz theory of x-ray scattering to thin epitaxial films c ontaining misfit dislocations and reanalyze the seemingly puzzling x-ray sc attering phenomena observed in several heteroepitaxial films. We show that the two-line shape scattering distribution and its dependence upon film thi ckness and momentum transfer can be understood in natural way and on a quan titative level. Extended diffuse x-ray scattering maps have been obtained f rom Nb(110)/Al2O3(11 (2) over bar0) which are discussed within the framewor k of this theory disclose a particular dislocation network at the Nb-Al2O3 interface. (C) 2001 American Institute of Physics.