A modified p-type Si/SiGe quantum well infrared photodetector for multispec
tral infrared imaging applications is demonstrated. In order to improve the
detector's performances we have used a SiGe emitter and a low-temperature
wet passivation process that give rise to a reduced dark current, even at r
elatively high bias voltages. Multispectral photoresponse at the long, mid
and short wavelength infrared atmospheric windows was observed. The respons
e peaks are assigned to the various classes of intervalence band transition
s in the quantum wells and in the SiGe emitter layers. (C) 2001 American In
stitute of Physics.