Enhanced tunnel magnetoresistance in granular nanobridges

Citation
K. Yakushiji et al., Enhanced tunnel magnetoresistance in granular nanobridges, APPL PHYS L, 78(4), 2001, pp. 515-517
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
515 - 517
Database
ISI
SICI code
0003-6951(20010122)78:4<515:ETMIGN>2.0.ZU;2-M
Abstract
We have fabricated granular nanobridge structures consisting of electrodes separated by a nanometer-sized gap in which a thin insulating CoAlO granula r film is filled, and measured the current-bias voltage characteristics in a magnetic field to investigate the spin-dependent transport. The Coulomb b lockade with a clear threshold voltage (V-th) is observed at 4.2 K. Tunnel magnetoresistance (TMR) is enhanced by fabricating nanobridges. TMR shows a maximum exceeding about 30% at the voltage slightly above V-th. This enhan cement is explained by the orthodox theory of single electron tunneling in ferromagnetic multiple tunnel junctions. (C) 2001 American Institute of Phy sics.