Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

Authors
Oiwa, A Slupinski, T Munekata, H
Citation
A. Oiwa et al., Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb, APPL PHYS L, 78(4), 2001, pp. 518-520
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
518 - 520
Database
ISI
SICI code
0003-6951(20010122)78:4<518:COMRPB>2.0.ZU;2-#
Abstract
The reduction in coercive force by light illumination has been found in fer romagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by mole cular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arisin g from excess photogenerated holes, reduces the domain wall energy and chan ges the magnetization hysteresis characteristics. The value of coercive for ce returns to the original value when excess holes recombine with trapped e lectrons. (C) 2001 American Institute of Physics.