Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

Citation
Rh. Cheng et al., Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition, APPL PHYS L, 78(4), 2001, pp. 521-523
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
521 - 523
Database
ISI
SICI code
0003-6951(20010122)78:4<521:PPCOCO>2.0.ZU;2-H
Abstract
We have used laser-initiated chemical vapor deposition to grow the chromium oxide thin films through the oxidation of Cr(CO)(6) in an oxygen environme nt. While both Cr2O3 and CrO2 are present in the film, the relative weight of each phase depends on the oxygen partial pressure. The Curie temperature of the film increases and approaches the bulk T-C of CrO2 (397 K) as the p artial oxygen pressure is increased. (C) 2001 American Institute of Physics .