Thermally stimulated current method applied on diodes with high concentration of deep trapping levels

Authors
Pintilie, I Pintilie, L Moll, M Fretwurst, E Lindstroem, G
Citation
I. Pintilie et al., Thermally stimulated current method applied on diodes with high concentration of deep trapping levels, APPL PHYS L, 78(4), 2001, pp. 550-552
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
550 - 552
Database
ISI
SICI code
0003-6951(20010122)78:4<550:TSCMAO>2.0.ZU;2-4
Abstract
We propose an improved method of thermally stimulated currents (TSC) spectr a analysis in the case of diodes having a concentration of traps higher tha n that of doping impurities. Beside the calculation of trap concentrations from TSC peaks analysis, the method allows us to evaluate the density and t he type of the very deep trapping level which, due to the contribution of l eakage current, can not be detected in a real TSC experiment. The proposed method is applied to a p(+)-n Silicon diode irradiated with 1.82x10(13)neut rons/cm(2). (C) 2001 American Institute of Physics.