Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000)

Authors
Ahrenkiel, RK Johnston, SW Keyes, BM Friedman, DJ Vernon, SM
Citation
Rk. Ahrenkiel et al., Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition (vol 77, pg 3794, 2000), APPL PHYS L, 78(4), 2001, pp. 559-559
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
4
Year of publication
2001
Pages
559 - 559
Database
ISI
SICI code
0003-6951(20010122)78:4<559:TPOGTF>2.0.ZU;2-I