AMORPHOUS-SILICON DOUBLE-INJECTION DEVICE WITH GATE-CONTROLLABLE N-TYPE NEGATIVE-RESISTANCE

An amorphous silicon double-injection pin diode with an injection gate was fabricated and analyzed. The device possesses a gate-controllable N-type negative-resistance current/voltage (I/V) curve, which can be employed for switching or logic control and can be combined with other amorphous devices to develop optical electronic IC's on a glass subst rate for low-cost applications. A model to illustrate the operating me chanism is included. Also, the design considerations to fit various ap plications were studied.