Design and analysis of vertical-cavity semiconductor optical amplifiers

Citation
J. Piprek et al., Design and analysis of vertical-cavity semiconductor optical amplifiers, IEEE J Q EL, 37(1), 2001, pp. 127-134
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
37
Issue
1
Year of publication
2001
Pages
127 - 134
Database
ISI
SICI code
0018-9197(200101)37:1<127:DAAOVS>2.0.ZU;2-W
Abstract
The authors present detailed, yet largely analytical, models for gain, opti cal bandwidth, and saturation power of vertical-cavity semiconductor optica l amplifiers (VCSOAs) in reflection and transmission mode. Simple formulas for the gain-bandwidth product are derived. The saturation model considers a sublinear material gain, gain enhancement by the standing-wave effect, an d all relevant carrier recombination mechanisms. Excellent agreement with m easurements on novel 1.3-mum VCSOAs is obtained. The models are used to ana lyze device performance and to investigate optimization options, Parameter plots are given which allow for an easy exploration of the VCSOA design spa ce, matching desired performance data with the required mirror reflectivity and pump current.