Large-signal-modulation of high-efficiency light-emitting diodes for optical communication

Citation
R. Windisch et al., Large-signal-modulation of high-efficiency light-emitting diodes for optical communication, IEEE J Q EL, 36(12), 2000, pp. 1445-1453
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1445 - 1453
Database
ISI
SICI code
0018-9197(200012)36:12<1445:LOHLDF>2.0.ZU;2-N
Abstract
The dynamic behavior of high-efficiency light-emitting diodes (LEDs) is inv estigated theoretically and experimentally. A detailed theoretical descript ion of the switch-on and switch-off transients of LEDs is derived. In the l imit of small-signal modulation, the well-established exponential behavior is obtained. However, in the case of high injection, which is easily reache d for thin active layer LEDs, the small-signal time constant is found to be up to a factor of two faster than the radiative recombination lifetime. Us ing such quantum-well LEDs, we have demonstrated optical data transfer,vith wide open eye diagrams at bit rates up to 2 Gbit/s, In addition, we have c ombined the use of thin active layers with the concept of surface-textured thin-film LEDs, which allow a significant improvement in the light extracti on efficiency. With LEDs operating at 0.5 Gbit/s and 1 Gbit/s, we have achi eved external quantum efficiencies of 36% and 29%, respectively.