Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length

Authors
Gutierrez-Castrejon, R Schares, L Occhi, L Guekos, G
Citation
R. Gutierrez-castrejon et al., Modeling and measurement of longitudinal gain dynamics in saturated semiconductor optical amplifiers of different length, IEEE J Q EL, 36(12), 2000, pp. 1476-1484
Citations number
33
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF QUANTUM ELECTRONICS
ISSN journal
00189197 → ACNP
Volume
36
Issue
12
Year of publication
2000
Pages
1476 - 1484
Database
ISI
SICI code
0018-9197(200012)36:12<1476:MAMOLG>2.0.ZU;2-T
Abstract
A new frequency-domain wave-propagation model that includes a position- and time-dependent carrier lifetime and the effect of amplified spontaneous em ission is introduced and used to accurately simulate recovery time experime nts in 0.5- and 1.0-mm long semiconductor optical amplifiers. It is compare d to a constant lifetime model at different saturation levels, shelving bet ter performance and consistency. The role of the amplified spontaneous emis sion in saturated amplifiers is also discussed.