Calibration of a two-dimensional numerical model for the optimization of LOGOS-type isolations by response surface methodology

The models used for process simulation have to be carefully calibrated in o rder to insure a correct prediction of the topography and doping/stress pro files of microelectronic devices. With the current miniaturization of these devices, the requirements on the accuracy of the simulated results become greater, which puts more constraints on the calibration methodology. This i s particularly the case for the silicon oxidation model, which is involved in numerous fundamental steps of an industrial process. In this paper, usin g response surface methodology, a viscoelastic oxidation model has been cal ibrated on a wide range of process conditions, which has allowed the optimi zation of LOCOS-type isolation structures for a 0.35-mum CMOS technology.