A study on R-m -> R-1 maps: Application to a 0.16-mu m via etch process endpoint

Citation
Ea. Rietman et N. Layadi, A study on R-m -> R-1 maps: Application to a 0.16-mu m via etch process endpoint, IEEE SEMIC, 13(4), 2000, pp. 457-468
Citations number
14
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
ISSN journal
08946507 → ACNP
Volume
13
Issue
4
Year of publication
2000
Pages
457 - 468
Database
ISI
SICI code
0894-6507(200011)13:4<457:ASOR-R>2.0.ZU;2-2
Abstract
We introduce several endpoint algorithms that map real-time, in situ proces s signals to a via etch process endpoint, Some of the mathematical techniqu es include: Andrews plots (Fourier series), Chebyshev polynomials, Legendre polynomials, wavelets, singular value decomposition, and neural networks. We show that many of the techniques work to varying degrees of success for a via etch process on 0.16-mum technology. Based on our observations from m any lots of manufacturing wafers and experiments with all the endpoint meth ods, we believe the Chebyshev polynomial area-time curves perform the best, but this statement should be taken with a caveat. It is really best to emp irically test the various methods for a given etch process to deduce the en dpoint algorithm for that application.