Interest in superconducting transistors is due to some potential benefits o
f these devices, such as the possibility to have large current gain and ban
dwidth at low temperatures. In this work we present experimental results co
ncerning with a new superconducting 3-terminal device showing true transist
or-lice properties at T=4.2K. It is a stacked double tunnel junction struct
ure where the intermediate film is a bilayer of superconducting Nb with an
Al quasiparticle trap which can be either in the superconducting or in the
normal metal state. Current amplification factors of up to 2.0 are observed
at a temperature of 4.2 K when the Al is superconducting. When the Al is i
n the normal State, large current gains of more than 50 are observed The op
eration is highly directional, i.e. practically no effect is observed when
the roles of the injector and detector junctions are reversed. The results
are explained according to the recently proposed QUAsiparticle TRApping TRA
Nnsistor model.