Development of a Nb/A1 technology for SNS Josephson junctions

Citation
V. Lacquaniti et al., Development of a Nb/A1 technology for SNS Josephson junctions, INT J MOD B, 14(25-27), 2000, pp. 3044-3049
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
14
Issue
25-27
Year of publication
2000
Pages
3044 - 3049
Database
ISI
SICI code
0217-9792(20001030)14:25-27<3044:DOANTF>2.0.ZU;2-E
Abstract
We report here the status of development of our Nb/Al/Nb SNS Josephson junc tions to be used as superconducting D/A converters. The electrical behaviou r and the morphology of these Nb/Al/Nb junctions are strongly dependent on the deposition rate of the AL barrier. Junctions fabricated at a high rate of 5 nm/s have stable and reproducible properties. A possible interpretatio n of the effect of the Al morphology on the electrical behaviour of the jun ctions is given.