Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions

A p-type device grade silicon wafer was implanted by 1 MeV Ru+ ions to a do se of 5.67 x 10(16) cm(-2). The microstructures of the as-implanted and ann ealed samples were studied mainly by analytical transmission electron micro scopy (TEM) and X-ray diffraction (XRD). The results showed that the implan tation resulted in a well-defined surface layer of about 910 nm in thicknes s. The layer was composed of ultra-fine Ru2Si3 crystallites in an amorphous matrix. After annealing, the inner part of the layer recovered completely to single crystal Si with nano-scaled Ru2Si3 embedded in it. A similar to 6 60 nm thick polycrystalline region consisting of Si and Ru2Si3 grains was f ormed at the surface. (C) 2001 Kluwer Academic Publishers.