Selective area MOVPE growth for 1.55 mu m laser diodes with vertically tapered thickness waveguide

We investigated the influence of growth pressure and V/III ratio on selecti vely grown InGaAs/InGaAsP MQW by using low-pressure metalorganic vapor phas e epitaxy (MOVPE). Diffusion parameters were determined from curve fitting to experimental data by using the diffusion equation. The diffusion length decreased with the increase of growth pressure. The growth enhancement at t he center of the mask opening increased and saturated over growth pressure of 100 mbar. The uniformity of PL intensity along the lateral direction was improved with the decrease of growth pressure and V/III ratio. We also rea lized a 1.55 mum SSC-LD with vertically tapered thickness waveguide. The de vice exhibited a far field angle of 6.9 degrees x 12.4 degrees and a slope efficiency as high as 0.31 W/A. (C) 2001 Kluwer Academic Publishers.