9 MeV au ion implantation into Ti and Ti-6Al-4V

Citation
R. Trejo-luna et al., 9 MeV au ion implantation into Ti and Ti-6Al-4V, J MATER SCI, 36(2), 2001, pp. 503-510
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
36
Issue
2
Year of publication
2001
Pages
503 - 510
Database
ISI
SICI code
0022-2461(200101)36:2<503:9MAIII>2.0.ZU;2-6
Abstract
Titanium and Ti-6Al-4V alloy samples were implanted with 9 MeV Au ions at r oom temperature with fluences up to 6.5 x 10(20) ions/m(2). The results wer e analyzed using Rutherford backscattering, X-ray diffraction, glancing ang le X-ray diffraction, and SEM. The glancing angle diffraction patterns show peaks corresponding to a new phase in both materials, presenting an hcp st ructure with larger lattice parameters than the unimplanted material. This phase is formed mainly by structural damage produced by the beam, and not b y the formation of compounds. Modifications of the grain size and microstra in were measured using the Williamson-Hall method. (C) 2001 Kluwer Academic Publishers.