A microstructural study of silicon carbide fibres through the use of Ramanmicroscopy

Citation
Y. Ward et al., A microstructural study of silicon carbide fibres through the use of Ramanmicroscopy, J MATER SCI, 36(1), 2001, pp. 55-66
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE
ISSN journal
00222461 → ACNP
Volume
36
Issue
1
Year of publication
2001
Pages
55 - 66
Database
ISI
SICI code
0022-2461(200101)36:1<55:AMSOSC>2.0.ZU;2-#
Abstract
The microstructures of three different silicon carbide (SiC) fibres produce d by CVD (chemical vapour deposition) have been examined in detail using Ra man microscopy. Raman spectra were mapped out across the entire cross-secti ons of these silicon carbide fibres using an automated x-y stage with a spa tial resolution of 1 mum. The Raman maps clearly illustrate the variations in microstructure in such types of silicon carbide fibres. It appears that the SCS-type fibres contain carbon as well as SiC whereas the Sigma 1140+ f ibre also contains free silicon. Furthermore, the differences in the detail ed structures of the carbon and silicon carbide present in the fibres can a lso be investigated. Raman microscopy is demonstrated to be a very sensitiv e technique for characterising the composition and microstructure of CVD si licon carbide fibres prepared using different processing conditions. (C) 20 01 Kluwer Academic Publishers.