Structural variations in polysilicon, associated with deposition temperature and degree of anneal

Raman microscopy has been used to investigate the structure of as deposited and annealed polysilicon films formed by low-pressure chemical vapour depo sition. The films were deposited between 620 degreesC and 570 degreesC, and the effects of various thermal annealing conditions on these samples is re ported. Components of the polysilicon Raman bands have been categorised acc ording to their wavenumber position and FWHM values. It has been shown that the degree and nature of change in material structure, is dependent upon: the starting material selected, the anneal temperature, and the anneal time . (C) 2001 Kluwer Academic Publishers.