Ellipsometric characterization of thin Porous GaAs layers formed in HF solutions

Citation
S. Zangooie et Ja. Woollam, Ellipsometric characterization of thin Porous GaAs layers formed in HF solutions, J MAT SCI L, 19(24), 2000, pp. 2171-2173
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
19
Issue
24
Year of publication
2000
Pages
2171 - 2173
Database
ISI
SICI code
0261-8028(200012)19:24<2171:ECOTPG>2.0.ZU;2-8