Improvement of the (111) texture and microstructures of Cu films by pulsedlaser annealing

Citation
Yw. Hsieh et al., Improvement of the (111) texture and microstructures of Cu films by pulsedlaser annealing, J MAT S-M E, 11(9), 2000, pp. 675-678
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
11
Issue
9
Year of publication
2000
Pages
675 - 678
Database
ISI
SICI code
0957-4522(200012)11:9<675:IOT(TA>2.0.ZU;2-H
Abstract
The improvement of the (1 1 1) texture and microstructure of Cu films on Ti N/Si and TiN/SiO2 substrates by pulsed KrF laser annealing as a function of the laser energy density, the deposition method of Cu films, and the orien tation of TiN substrates is studied. Upon annealing at an energy density be low 1.0 J cm(-2) the (1 1 1) texture of the evaporated Cu films increases w ith the energy density, whereas for the sputtered Cu films the (2 0 0) text ure is promoted. The higher oxygen concentration in the sputtered Cu films may be responsible for the degradation of the Cu(1 1 1) texture. The enhanc ement of the Cu(1 1 1) texture is more evident for (1 1 1)-oriented TiN sub strates than for (2 0 0)-oriented TiN substrates. The present study shows t hat pulsed laser annealing is superior to vacuum annealing in improving the (1 1 1) texture and microstructure of Cu films via the melt/solidification process. (C) 2000 Kluwer Academic Publishers.