Large grain CdSe0.9Te0.1 layers grown from the vapor in presence of alpha b-Cr2O3

Citation
E. Konstantinova-kabassanova et al., Large grain CdSe0.9Te0.1 layers grown from the vapor in presence of alpha b-Cr2O3, J MAT S-M E, 11(9), 2000, pp. 679-683
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN journal
09574522 → ACNP
Volume
11
Issue
9
Year of publication
2000
Pages
679 - 683
Database
ISI
SICI code
0957-4522(200012)11:9<679:LGCLGF>2.0.ZU;2-K
Abstract
Polycrystalline layers of the alloy CdSe0.9Te0.1 were prepared from compact ed plates of CdSe-CdTe-Cr2O3 powders. By sintering these plates in a temper ature gradient, sublimation of CdSe and CdTe occurs which finally leads to crystallization of a CdSeTe alloy layer on the remaining Cr2O3 particles. E xtensive characterization of the layers has been performed using X-ray diff raction, SEM observations, photoconductivity and photoluminescence measurem ents. A grain size up to 40 mum has been obtained with some preferential mi cro-crystalline orientation along the c-axis of the wurtzite structure. Rel ative photoconductivity approaching 10(6) under 500 Lx illumination has bee n measured, which demonstrates the high photosensitivity of this material g rown in the presence of alpha chromium tri-oxide. (C) 2000 Kluwer Academic Publishers.