Electrical properties of bulk silicon dioxide and SiO2/Si interface formedby tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition

The electrical properties of bulk silicon dioxide and the SiO2/Si interface formed by TEOS/O-2 PECVD were investigated. Additionally, the gas phase in the glow discharge was investigated using OES analysis under various exper imental conditions. Changes of TEOS/O-2 ratio and the deposition temperatur e influenced the electrical properties of silicon oxide films. With decreas ing TEOS/O-2, ratio, the electrical properties of bulk silicon dioxide and the SiO2/Si interface were improved. This is thought to be due to the decre ase of carbon impurity in the growing oxide film. At higher deposition temp eratures, the oxide films had good electrical properties, which is thought to be due to the change of structure in the oxide film. From C-V analysis f or all experimental conditions, the P-b center defects were observed near E -v+0.25eV and E (v)+0.73eV in the Si band gap. The magnitude was influenced by process parameters such as the TEOS/O-2 ratio and the deposition temper ature. From OES analysis, the main emission peaks observed in the glow disc harge were from CO, CO2+, CH, and C. With decreasing TEOS/O-2 ratio, the em ission intensity of CH decreased and that of CO increased. (C) 2000 Kluwer Academic Publishers.