Usin the transfer matrix method we have studied the optical properties rela
ted to the photonic band gap (PBG) concept of the III-nitride family partic
ularly InN and AlN. We have shown that these materials present, for a parti
cular lattice constant and for the same structure, PBGs in all near infrare
d, optical and ultaviolet regions. In order to give optimal conditions for
experiments, the number and the width of these PBGs are studied in more det
ail. The case of the absorption which occurs for the higher lattice paramet
er is discussed. This novel class of material opens up many potential appli
cations. For example, PBG crystals can be used to inhibit spontaneous emiss
ion in photonic devices, leading to more efficient light emitters such as s
ingle-mode-light emitting diodes. (C) 2000 Kluwer Academic Publishers.